Fabrication method and fabrication apparatus of group III nitride crystal substance
US7858502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2009 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Aug 13, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.