Hwei-Heng Wang
2Patents
2h-index
2Co-inventors
27Inventor score
Filing activity: Sep 15, 1997 → Sep 21, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6326317A | Method for fabricating metal oxide semiconductor field effect transistor (MOSFET) | Electricity | 5 | Expired |
| US5958519A | Method for forming oxide film on III-V substrate | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.