Method for forming oxide film on III-V substrate
US5958519A · kind A · utility
4Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Sep 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming an oxide film on a III-V substrate. The method includes steps of (a) preparing an acidic solution containing a IIIA-ion, (b) adding an basic solution into the acidic solution to provide a growth solution of a specific pH value, and (c) placing the III-V substrate into the growth solution to form the oxide film on the III-V substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.