Method for fabricating metal oxide semiconductor field effect transistor (MOSFET)
US6326317A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Sep 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for manufacturing a metal oxide semiconductor FET (MOSFET), which utilizes a low-temperature liquid phase oxidation for III-V group. The method includes the steps of (a) providing a substrate, (b) forming an epitaxial layer on the substrate, (c) defining and forming a drain and a source on a portion of the epitaxial layer, (d) forming a recess in an another portion of the epitaxial layer, (e) forming an oxide layer on a surface of the recess by relatively low-temperature oxidation, and (f) forming a gate on a portion of the oxide layer between the drain and source. In addition, the method further includes two selective procedures, that is, a synchronic sulfurated passivation process which can be performed with the growth of the oxide film simultaneously, and a rapid thermal annealing (RTA) process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.