I-Ching Chen
13Patents
2h-index
25Co-inventors
54Inventor score
Filing activity: Dec 9, 2004 → Mar 4, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10566519B2 | Method for forming a flat bottom electrode via (BEVA) top surface for memory | Electricity | 6 | Active |
| US9754955B2 | High-K-last manufacturing process for embedded memory with metal-oxide-nitride-oxide-silicon (MONOS) memory cells | Electricity | 2 | Active |
| US12164787B2 | Microcontroller and memory control method thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US12098412B2 | Roseburia hominis HGM001 isolate and use thereof | Chemistry; Metallurgy | 0 | Active |
| US12405656B2 | Power control method for microcontroller unit and power control system using the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US9842850B2 | High-K-last manufacturing process for embedded memory with silicon-oxide-nitride-oxide-silicon (SONOS) memory cells | Electricity | 0 | Active |
| US7534602B2 | Promoters and usage thereof | Chemistry; Metallurgy | 0 | Expired |
| US11751485B2 | Flat bottom electrode via (BEVA) top surface for memory | Electricity | 0 | Active |
| US10158072B1 | Step height reduction of memory element | Electricity | 0 | Active |
| US10763426B2 | Method for forming a flat bottom electrode via (BEVA) top surface for memory | Electricity | 0 | Active |
| US11201281B2 | Method for forming a flat bottom electrode via (BEVA) top surface for memory | Electricity | 0 | Active |
| US8542358B2 | Optical calibration and testing device for machine tools | Physics | 0 | Active |
| US11844286B2 | Flat bottom electrode via (BEVA) top surface for memory | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.