High-K-last manufacturing process for embedded memory with silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
US9842850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) using high-κ metal gate (HKMG) technology with an embedded silicon-oxide-nitride-oxide-silicon (SONOS) memory cell is provided. A logic device is arranged on a semiconductor substrate and comprises a logic gate. The logic gate is arranged within a high κ dielectric layer. A memory cell is arranged on the semiconductor substrate and comprises a control transistor and a select transistor laterally adjacent to one another. The control and select transistors respectively comprise a control gate and a select gate. The control transistor further comprises a charge trapping layer underlying the control gate. The control and select gates are a first material, and the logic gate is a second material. A high-κ-last method for manufacturing the IC is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.