Ian J. Saunders
4Patents
3h-index
6Co-inventors
47Inventor score
Filing activity: Feb 13, 1979 → Dec 30, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4290825A | Semiconductor devices containing protons and deuterons implanted regions | Electricity | 15 | Expired |
| US4394180A | Method of forming high resistivity regions in GaAs by deuteron implantation | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7556554B2 | Apparatus and method for manufacturing optical objects | Performing Operations; Transporting | 4 | Expired |
| US7471398B2 | Method for measuring contour variations | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.