Semiconductor devices containing protons and deuterons implanted regions
US4290825A · kind A · utility
15Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1979 |
| Grant date | Sep 22, 1981 |
| Priority date | — |
| Expiry date | Feb 13, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing gallium arsenide devices in which regions of high resistivity are created in the gallium arsenide by subjecting the regions to bombardment by protons and then by deuterons, and devices so made.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.