Method of forming high resistivity regions in GaAs by deuteron implantation
US4394180A · kind A · utility
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2References
9Claims
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Key dates
| Filing date | Jun 12, 1980 |
| Grant date | Jul 19, 1983 |
| Priority date | — |
| Expiry date | Jun 12, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldOther consumer goods
- WIPO sectorOther fields
Abstract
A process for producing regions of high resistivity in gallium arsenide, and other related compounds and mixed crystals which show electrical behavior which is similar to that of gallium arsenide, in which deuterons are implanted into a substrate made of the semi-conductor body with energies up to a maximum value corresponding to a desired depth of penetration into the body. Apparatus for carrying out the process also is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.