Irene S. Wan
3Patents
2h-index
3Co-inventors
33Inventor score
Filing activity: Nov 27, 2002 → Jan 18, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6984860B2 | Semiconductor device with high frequency parallel plate trench capacitor structure | Electricity | 29 | Expired |
| US7189608B2 | Semiconductor device having reduced gate charge and reduced on resistance and method | Electricity | 7 | Expired |
| US7538370B2 | Semiconductor device having reduced gate charge and reduced on resistance and method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.