Semiconductor device with high frequency parallel plate trench capacitor structure
US6984860B2 · kind B2 · utility
29Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
Abstract
A semiconductor device (10) is formed on a semiconductor substrate (12) whose surface (24) is formed with a trench (18). A capacitor (20) has a first plate (22) formed over the substrate surface with first and second portions lining first and second sidewalls (25) of the trench, respectively. A second plate (35, 38) is formed over the first plate and extends into the trench between the first and second portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.