Semiconductor device having reduced gate charge and reduced on resistance and method
US7538370B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2007 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Jan 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/517
Abstract
In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.