Thin film resistor (TFR) formed in an integrated circuit device using TFR cap layer(s) as an etch stop and/or hardmask
US11508500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | Nov 22, 2022 |
| Priority date | — |
| Expiry date | Jun 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.