InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
US6495867B1 · kind B1 · utility
7Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Jul 26, 2000 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Jul 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN based three layer buffer on a sapphire substrate provides a template for growth of a high quality I GaN layer as a substitute substrate for growth of a Nitride based LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.