Inventor · Hsinchu, TW

Jheng-Long Chen

2Patents
0h-index
2Co-inventors
21Inventor score

Filing activity: Feb 11, 2020 → Jul 25, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US12331398B2 Method of forming metal oxide layer using deposition apparatus Electricity 0 Active
US12359313B2 Deposition apparatus and method of forming metal oxide layer using the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.