Deposition apparatus and method of forming metal oxide layer using the same
US12359313B2 · kind B2 · utility
0Cited by
12References
20Claims
0Family size
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Key dates
| Filing date | Feb 11, 2020 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Sep 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for a reaction gas to pass through. The hydrophobic film is coated on a surface of the shower plate and surfaces of the plurality of dispensing holes. A method of forming a metal oxide layer using the deposition apparatus is further provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.