Method of forming metal oxide layer using deposition apparatus
US12331398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jul 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.