Inventor · Montpelier, VT, US

John Benoit

24Patents
11h-index
26Co-inventors
75Inventor score

Filing activity: Dec 16, 1988 → Apr 2, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US9030789B2 Plug tail systems Emerging Cross-Sectional Technologies 54 Active
US8267719B1 Plug tail lighting switch and control system Emerging Cross-Sectional Technologies 53 Active
US6994585B2 Electrical wiring system Electricity 34 Expired
US7407410B1 Electrical wiring system Electricity 19 Active
US7780470B2 Plug tail lighting switch and control system Emerging Cross-Sectional Technologies 15 Active
US7722389B2 Shock-proof electrical wiring system Electricity 15 Active
US7285009B1 Electrical wiring system Electricity 15 Expired
US7749018B1 Electrical wiring system Electricity 13 Active
US7713084B1 Protective electrical wiring device and system Electricity 12 Active
US4998093A Portable personal electronic perimeter alarm Physics 11 Expired
US7470145B1 Compact electrical wiring system Electricity 11 Active
US7736175B1 Compact electrical wiring system Electricity 7 Active
US8243402B2 Plug tail systems Emerging Cross-Sectional Technologies 7 Active
US7497725B2 Compact electrical wiring system Electricity 6 Active
US8482101B2 Bipolar transistor structure and method including emitter-base interface impurity Electricity 6 Active
US8649133B2 Plug tail systems Emerging Cross-Sectional Technologies 4 Active
US8091000B2 Disabling portions of memory with defects Physics 3 Active
US7887363B1 Protective electrical wiring device and system Electricity 2 Active
US9059196B2 Bipolar junction transistors with self-aligned terminals Electricity 2 Active
US9059234B2 Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region Electricity 2 Active
US9297853B2 In-line measurement of transistor device cut-off frequency Electricity 1 Active
US9231087B2 Bipolar junction transistors with self-aligned terminals Electricity 1 Active
US7868423B2 Optimized device isolation Electricity 1 Active
US9224843B2 Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.