John P. Meskell
2Patents
0h-index
5Co-inventors
21Inventor score
Filing activity: Aug 18, 2020 → Nov 19, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11552190B2 | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region | Electricity | 0 | Active |
| US12032014B2 | Semiconductor device configured for gate dielectric monitoring | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.