Jong Chen
2Patents
1h-index
12Co-inventors
41Inventor score
Filing activity: Mar 31, 2000 → Dec 6, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6340638B1 | Method for forming a passivation layer on copper conductive elements | Electricity | 2 | Expired |
| US9090452B2 | Mechanism for forming MEMS device | Performing Operations; Transporting | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.