Kenneth M. Thrun
3Patents
3h-index
4Co-inventors
36Inventor score
Filing activity: Aug 11, 1983 → May 9, 1985
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4465552A | Method of selectively etching silicon dioxide with SF.sub.6 /nitriding component gas | Electricity | 27 | Expired |
| US4615764A | SF6/nitriding gas/oxidizer plasma etch system | Electricity | 27 | Expired |
| US4582581A | Boron trifluoride system for plasma etching of silicon dioxide | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.