Boron trifluoride system for plasma etching of silicon dioxide
US4582581A · kind A · utility
12Cited by
27References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1985 |
| Grant date | Apr 15, 1986 |
| Priority date | — |
| Expiry date | May 9, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
BF.sub.3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed. In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.