SF6/nitriding gas/oxidizer plasma etch system
US4615764A · kind A · utility
27Cited by
14References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1984 |
| Grant date | Oct 7, 1986 |
| Priority date | — |
| Expiry date | Nov 5, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gaseous mixture of SF.sub.6, a nitriding gas component and an oxidizer gas component is disclosed as an effective SiO.sub.2 etchant having enhanced selectively for use in either the plasma or reactive ion etch process. By adding an oxidizing gas to the SF.sub.6 nitriding gas plasma etchant, the selectively for SiO.sub.2 over silicon or polysilicon is marked improved. The optional addition of an inert diluent gas did not substantially change these results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.