Laurence Boissonnet
3Patents
0h-index
5Co-inventors
27Inventor score
Filing activity: Oct 26, 2001 → Mar 9, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7705427B2 | Integrated circuit comprising a gradually doped bipolar transistor | Electricity | 0 | Active |
| US8168504B2 | Integrated circuit comprising a gradually doped bipolar transistor and corresponding fabrication process | Electricity | 0 | Active |
| US7015105B2 | Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.