Integrated circuit comprising a gradually doped bipolar transistor and corresponding fabrication process

US8168504B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Damien Lenoble · Wellin, BE
• Thierry Schwartzmann · Le Versoud, FR
• Laurence Boissonnet · Grenoble, FR

Key dates

• Filing date: Mar 9, 2010
• Grant date: May 1, 2012
• Expiry date: Aug 31, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the central zone and the lateral zone 4a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.