Liem T. Tran
7Patents
5h-index
3Co-inventors
45Inventor score
Filing activity: Apr 13, 1994 → Aug 14, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5648666A | Double-epitaxy heterojunction bipolar transistors for high speed performance | Electricity | 14 | Expired |
| US5631477A | Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor | Electricity | 12 | Expired |
| US5840612A | Method of fabricating very high gain heterojunction bipolar transistors | Electricity | 8 | Expired |
| US5736417A | Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5930636A | Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes | Electricity | 5 | Expired |
| US6037646A | High-frequency GaAs substrate based schottky barrier diodes | Electricity | 3 | Expired |
| US5892248A | Double photoresist layer self-aligned heterojuction bipolar transistor | Emerging Cross-Sectional Technologies | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.