Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes
US5930636A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1996 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | May 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector layer. A suitable dielectric material is deposited on top of the collector layer. Vias are formed in the collector layer and subcollector layer for the barrier and ohmic contacts. The collector via is relatively deeply etched into the collector layer to lower the series resistance between the barrier and ohmic contacts, which results in relatively higher cut-off frequency performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.