Mami Nishimura
7Patents
2h-index
9Co-inventors
36Inventor score
Filing activity: Nov 18, 2010 → Sep 28, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8641930B2 | In—Ga—Zn type oxide sputtering target | Chemistry; Metallurgy | 6 | Active |
| US9206502B2 | In—Ga—Zn oxide sputtering target and method for producing same | Electricity | 3 | Active |
| US10196733B2 | Sputtering target | Chemistry; Metallurgy | 2 | Active |
| US11462399B2 | Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film | Chemistry; Metallurgy | 1 | Active |
| US9214519B2 | In2O3—SnO2—ZnO sputtering target | Electricity | 1 | Active |
| US9054196B2 | Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn | Electricity | 0 | Active |
| US8999208B2 | In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.