Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn
US9054196B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | May 1, 2012 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | May 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58≦In/(In+Ga+Zn)≦0.68 and 0.15<Ga/(In+Ga+Zn)≦0.29, the region 2 being defined by 0.45≦In/(In+Ga+Zn)<0.58 and 0.09≦Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45≦In/(In+Ga+Zn)<0.58 and 0.20≦Ga/(In+Ga+Zn)≦0.27.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.