Marc Demand
4Patents
2h-index
6Co-inventors
30Inventor score
Filing activity: Oct 24, 2006 → Jan 9, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8319295B2 | Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies | Electricity | 20 | Active |
| US7521369B2 | Selective removal of rare earth based high-k materials in a semiconductor device | Electricity | 4 | Active |
| US7598184B2 | Plasma composition for selective high-k etch | Electricity | 1 | Active |
| US7390708B2 | Patterning of doped poly-silicon gates | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.