Marjorie HESSE
2Patents
0h-index
3Co-inventors
24Inventor score
Filing activity: Dec 20, 2018 → Feb 19, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10930757B2 | Method of manufacturing MOS transistor spacers | Electricity | 0 | Active |
| US12125899B2 | MOS transistor having substantially parallelepiped-shaped insulating spacers | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.