Inventor · Ome, JP

Masato Kunitomo

6Patents
4h-index
17Co-inventors
54Inventor score

Filing activity: Jan 28, 1998 → Mar 7, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6096597A Method for fabricating an integrated circuit structure Electricity 62 Expired
US6235572A Method of making a memory cell having two layered tantalum oxide films Electricity 38 Expired
US6534375B2 METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS Electricity 7 Expired
US6720603B2 CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER Electricity 5 Expired
US6746913B2 Method of manufacturing semiconductor integrated circuit device comprising a memory cell and a capacitor Electricity 0 Expired
US12196791B2 Signal processing system and signal processing method Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.