Method for fabricating an integrated circuit structure
US6096597A · kind A · utility
62Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jan 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/711
Abstract
In one embodiment, the present invention provides a method of treating a dielectric layer 24. First, the dielectric layer is heated while being subjected to an O.sub.2 plasma. After that, the dielectric layer is heated while being subject to an ozone environment. This method can be useful in forming a capacitor 12 dielectric 24. In turn, the capacitor could be used in a DRAM memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.