Masayoshi Umeno
4Patents
4h-index
7Co-inventors
39Inventor score
Filing activity: Sep 27, 1985 → Feb 22, 1990
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4963508A | Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice | Emerging Cross-Sectional Technologies | 133 | Expired |
| US5256594A | Masking technique for depositing gallium arsenide on silicon | Emerging Cross-Sectional Technologies | 73 | Expired |
| US4928154A | Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers | Emerging Cross-Sectional Technologies | 57 | Expired |
| US4789421A | Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal | Emerging Cross-Sectional Technologies | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.