Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal
US4789421A · kind A · utility
5Cited by
6References
11Claims
0Family size
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Key dates
| Filing date | Sep 27, 1985 |
| Grant date | Dec 6, 1988 |
| Priority date | — |
| Expiry date | Sep 27, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP and AlGaP thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.