Massimo Cuscuna
3Patents
0h-index
8Co-inventors
24Inventor score
Filing activity: Nov 22, 2006 → Jun 4, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7674694B2 | Process for manufacturing a TFT device with source and drain regions having gradual dopant profile | Electricity | 0 | Active |
| US8283702B2 | Process for manufacturing a large-scale integration MOS device and corresponding MOS device | Electricity | 0 | Active |
| US8030192B2 | Process for manufacturing a large-scale integration MOS device and corresponding MOS device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.