Michael C. Nolan
3Patents
1h-index
6Co-inventors
33Inventor score
Filing activity: Dec 8, 2009 → Sep 3, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9228274B2 | Axial gradient transport growth process and apparatus utilizing resistive heating | Chemistry; Metallurgy | 4 | Active |
| US9322110B2 | Vanadium doped SiC single crystals and method thereof | Chemistry; Metallurgy | 1 | Active |
| US9580837B2 | Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material | Chemistry; Metallurgy | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.