Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
US9580837B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2014 |
| Grant date | Feb 28, 2017 |
| Priority date | — |
| Expiry date | May 30, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for growing bulk SiC single crystals using chemical vapor transport, wherein silicon acts as a chemical transport agent for carbon, a growth crucible is charged with a solid carbon source material and a SiC single crystal seed disposed therein in spaced relationship. A halosilane gas, such as SiCl4 and a reducing gas, such as H2, are introduced into the crucible via separate inlets and mix in the crucible interior. The crucible is heated in a manner that encourages chemical reaction between the halosilane gas and the reducing gas leading to the chemical reduction of the halosilane gas to elemental silicon (Si) vapor. The produced Si vapor is transported to the solid carbon source material where it reacts with the solid carbon source material yielding volatile Si-bearing and C-bearing molecules. The produced Si-bearing and C-bearing vapors are transported to the SiC single crystal seed and precipitate on the SiC single crystal seed causing growth of a SiC single crystal on the SiC single crystal seed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.