Vanadium doped SiC single crystals and method thereof
US9322110B2 · kind B2 · utility
1Cited by
14References
9Claims
0Family size
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Key dates
| Filing date | Oct 28, 2013 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Nov 3, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.