Inventor · Hengshan, TW

Ming-Tsang Yang

4Patents
2h-index
7Co-inventors
33Inventor score

Filing activity: Apr 14, 2006 → Aug 24, 2010

Most-cited inventions

PatentTitleAreaCited byStatus
US7423903B2 Single-gate non-volatile memory and operation method thereof Electricity 28 Active
US8305808B2 Low-voltage EEPROM array Electricity 6 Active
US8300469B2 Cost saving electrically-erasable-programmable read-only memory (EEPROM) array Physics 1 Active
US8300461B2 Area saving electrically-erasable-programmable read-only memory (EEPROM) array Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.