Nagatoshi Ooki
9Patents
4h-index
10Co-inventors
50Inventor score
Filing activity: Jun 29, 2001 → Jun 27, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7115954B2 | Semiconductor device including stress inducing films formed over n-channel and p-channel field effect transistors and a method of manufacturing the same | Electricity | 81 | Expired |
| US7105394B2 | Semiconductor device and a method of manufacturing the same | Electricity | 52 | Expired |
| US7411253B2 | CMOS transistors using gate electrodes to increase channel mobilities by inducing localized channel stress | Electricity | 6 | Active |
| US7414293B2 | Structure and method of applying localized stresses to the channels of PFET and NFET transistors for improved performance | Electricity | 4 | Active |
| US8963250B2 | Semiconductor device including a film for applying stress to a channel formation region to increase current flow | Electricity | 3 | Active |
| US7705402B2 | Semiconductor device including a nitride containing film to generate stress for improving current driving capacity of a field effect transistor | Electricity | 2 | Active |
| US9978869B2 | P-channel transistor having an increased channel mobility due to a compressive stress-inducing gate electrode | Electricity | 0 | Active |
| US9412669B2 | Semiconductor device and a method of manufacturing the same | Electricity | 0 | Active |
| US11022372B2 | Air conditioner | Mechanical Engineering; Lighting; Heating | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.