Semiconductor device and a method of manufacturing the same
US7105394B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6733
Abstract
A method of manufacturing a semiconductor device having an n-type FET and p-type FET, each formed over a semiconductor substrate, calls for (a) forming, over the n-type FET and p-type FET, a first insulating film, for generating a tensile stress in the channel formation region of the n-type FET, to cover gate electrodes of the FETs, while covering, with an insulating film, a semiconductor region between the gate electrode of the p-type FET and an element isolation region of the semiconductor substrate; (b) selectively removing the first insulating film from the upper surface of the p-type FET by etching; (c) forming, over the n-type and p-type FETs, a second insulating film, for generating a compressive stress in the channel formation region of the p-type FET, to cover gate electrodes of the FETs; and (d) selectively removing the second insulating film from the upper surface of the n-type FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.