Neena Garg
7Patents
3h-index
26Co-inventors
49Inventor score
Filing activity: Mar 16, 2000 → Jul 22, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6531375B1 | Method of forming a body contact using BOX modification | Electricity | 42 | Expired |
| US6488778B1 | Apparatus and method for controlling wafer environment between thermal clean and thermal processing | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6495429B1 | Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealing | Electricity | 5 | Expired |
| US6784072B2 | Control of buried oxide in SIMOX | Electricity | 2 | Expired |
| US6967376B2 | Divot reduction in SIMOX layers | Electricity | 1 | Expired |
| US6531411B1 | Surface roughness improvement of SIMOX substrates by controlling orientation of angle of starting material | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7492008B2 | Control of buried oxide in SIMOX | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.