Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealing

US6495429B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michael E. Adamcek · Wappingers Falls, US
• Anthony G. Domenicucci · New Paltz, US
• Stephen Fox · Hopewell Junction, US
• Neena Garg · Fishkill, US
• Kenneth J. Giewont · Hopewell Junction, US
• Thomas R. Kupiec · Poughkeepsie, US
• Junedong Lee · Hopewell Junction, US
• Devendra K. Sadana · Pleasantville, US

Key dates

• Filing date: Jan 23, 2002
• Grant date: Dec 17, 2002
• Expiry date: Jan 23, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76243
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method to control the quality of a buried oxide region, and to substantially reduce or eliminate deep divots in SOI substrates is provided. Specifically, the inventive method includes the steps of implanting oxygen ions into a surface of a Si-containing substrate; and annealing the Si-containing substrate containing the implanted oxygen ion at a temperature of about 1300° C. or above and in a chlorine-containing ambient so as to form a buried oxide region that electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. The chlorine-containing ambient employed in the annealing step includes oxygen and a chlorine-containing carrier gas such as HCl, methylene chloride, trichloroethylene and trans 1,2-dichloroethane.