Olivier Pollet
5Patents
1h-index
4Co-inventors
36Inventor score
Filing activity: Sep 16, 2016 → Nov 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10043890B2 | Method of forming spacers for a gate of a transistor | Electricity | 6 | Active |
| US9947541B2 | Method of forming spacers for a gate of a transistor | Electricity | 1 | Active |
| US11127835B2 | Method for etching a three-dimensional dielectric layer | Electricity | 1 | Active |
| US12215430B2 | Method for increasing the surface roughness of a metal layer | Electricity | 0 | Active |
| US12094722B2 | Method for increasing the surface roughness of a metal layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.