Method for etching a three-dimensional dielectric layer
US11127835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2019 |
| Grant date | Sep 21, 2021 |
| Priority date | — |
| Expiry date | Jan 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for etching a dielectric layer covering at least partially a flank of a structure made of a semi-conductive material, the structure having at least one face, the method including a plurality of sequences, each including at least the following steps: a main oxidation so as to form an oxide film; a main anisotropic etching of the oxide film, carried out so as to etch a portion of the oxide film extending parallel to the flanks and at least some of the dielectric layer, be stopped before etching the structure and a whole thickness of another portion of the oxide film extending perpendicularly to the flanks, the steps being repeated until the complete removal of the dielectric layer located on the flanks of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.