Patent · US Active

Method for increasing the surface roughness of a metal layer

US12094722B2 · kind B2 · utility

0Cited by
1References
16Claims
0Family size

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Key dates

Filing dateNov 26, 2021
Grant dateSep 17, 2024
Priority date
Expiry dateMar 13, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH04L2209/12
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for increasing the surface roughness of a metal layer, includes depositing on the metal layer a sacrificial layer made of a dielectric material including nitrogen; exposing a surface of the sacrificial layer to an etching plasma so as to create asperities; and etching the metal layer through the sacrificial layer, so as to transfer the asperities of the sacrificial layer into a part at least of the metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.