Method for increasing the surface roughness of a metal layer
US12094722B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 26, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Mar 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04L2209/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for increasing the surface roughness of a metal layer, includes depositing on the metal layer a sacrificial layer made of a dielectric material including nitrogen; exposing a surface of the sacrificial layer to an etching plasma so as to create asperities; and etching the metal layer through the sacrificial layer, so as to transfer the asperities of the sacrificial layer into a part at least of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.