Omer Dokumaci
2Patents
2h-index
3Co-inventors
30Inventor score
Filing activity: Sep 10, 2003 → Feb 7, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6906360B2 | Structure and method of making strained channel CMOS transistors having lattice-mismatched epitaxial extension and source and drain regions | Electricity | 30 | Expired |
| US7297583B2 | Method of making strained channel CMOS transistors having lattice-mismatched epitaxial | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.