Rainer Kurps
2Patents
2h-index
8Co-inventors
30Inventor score
Filing activity: Apr 12, 2000 → May 24, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7196382B2 | Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer | Electricity | 7 | Expired |
| US6358823B1 | Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.