Raymond E. Cotner
6Patents
3h-index
9Co-inventors
50Inventor score
Filing activity: Dec 11, 1995 → Jun 7, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5714413A | Method of making a transistor having a deposited dual-layer spacer structure | Emerging Cross-Sectional Technologies | 81 | Expired |
| US5633202A | High tensile nitride layer | Emerging Cross-Sectional Technologies | 45 | Expired |
| US6046494A | High tensile nitride layer | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6720631B2 | Transistor having a deposited dual-layer spacer structure | Emerging Cross-Sectional Technologies | 3 | Expired |
| US11276760B2 | Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same | Electricity | 1 | Active |
| US10355093B2 | Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.